electrical characteristics (t a = 25 c) part number ne68939 package code 39 symbols parameters units min typ max i cbo collector cutoff current, v cb = 5 v, i e = 0 a 2.5 i ebo emitter cutoff current, v eb = 1 v, i c = 0 a 2.5 h fe dc current gain, v ce = 3.6 v, i c = 100 ma 30 p -1 output power dbm 24.5 g p power gain db 6.5 8 c collector efficiency % 50 62 t on maximum device on time m s 10.0 nec's npn silicon epitaxial transistor california eastern laboratories features ? output power at 1db compression point: 24.5 dbm typ @f = 1.9 gh z , v ce = 3.6 v, class ab, duty 1/8 ? 4 pin mini mold package: ne68939 ne68939 v ce = 3.6 v, f = 1.9 gh z icq = 2 ma (class ab) duty 1/8 description nec's ne68939 is a low voltage, npn silicon bipolar tran- sistor for pulsed power applications. the device is designed to operate from a 3.6 v supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 gh z with a 1:8 duty cycle. these characteristics make it an ideal device for tx driver stage in a 1.9 gh z digital cordless telephone (dect or phs). the part is supplied in a sot-143 (sc-61) 4-pin mini- mold package and is available on tape and reel. the ne68939 transistors are manufactured to nec's strin- gent quality assurance standards to ensure highest reliability and consistent superior performance. outline dimensions (units in mm) package outline 39 2.8 +0.2 -0.3 +0.10 -0.05 (leads 2, 3, 4) 0.6 +0.10 -0.05 0.16 +0.10 -0.06 5? 5? 0.8 1.1 +0.2 -0.1 1 2 3 0 to 0.1 4 0.4 2.9 0.2 0.95 0.85 1.9 1.5 +0.2 -0.1 1) collector 2) emitter 3) base 4) emitter
absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltage v 9.0 v ceo collector to emitter voltage v 6.0 v ebo emitter to base voltage v 2.0 i c collector current ma 150 p t total power dissipation mw 200 (cw) t j junction temperature c 150 t stg storage temperature c -65 to +150 note: 1. operation in excess of any one of these parameters may result in permanent damage. 4 1.0 3 2.4 2 1.9 1.0 1 part number qty ne68939-t1-a 3k/reel note: 1. lead material: cu lead plating: pbsn ordering information frequency z in z out (gh z ) ( ? ? ? ? ? ) ( ? ? ? ? ? ) 1.9 7.85+j5.62 21.9-j11.6 0.9 3.1+j11.6 5.3-j5.7 impedance looking into device v cc = 3.6 v, i cq = i ma, class ab (2) tx amplifier for phs (1) tx amplifier for dect application +3 dbm po = 27 dbm -14 dbm p1 = 22 dbm ne68839 ne68939 ne69039 pc2771t ne68939 ne69039 output power, pout (dbm) input power, pin (dbm) collector efficency, c (%) collector currents, i c (ma) power gain, gp (db) output power, collector efficiency, collector current and power gain vs. input power f = 1.9 gh z , v cc = 3.6v i c = 1ma (duty 1/8) 30 25 20 15 10 5 5101520 25 80 60 40 20 0 8 7 6 5 4 30 20 10 0 pout c i c g p p 1db 24.5 dbm c 62 % i c 15 ma g l 9.0 db typical data f = 1.9 ghz, v cc = 3.6 v, i cq = 1 ma, duty = 1/8 z in ( ? ? ? ? ? ), z out ( ? ? ? ? ? ) data j50 j25 j10 0 -j10 -j25 -j50 -j100 j100 0 z in z out z in z out ne68939 outline 39 recommended p.c.b. layout exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com 07/05/2000 data subject to change without notice
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix ? indicates that the device is pb-free. the ?z suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cel? understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway t o better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and ce l suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cel? liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.
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